Electronic properties of deep levels in p-type CdTe
نویسنده
چکیده
DLTS and associated electrical measurements were made on unintentionally doped CdTe crystals obtained from several vendors, on Cu-doped CdTe, and on Te-annealed CdTe. All of the crystals were p-type. Four majority carrier deep levels were observed in the temperature range from 100-300 K with activation energies relative to the valence band of0.2, 0.41, 0.45, and 0.65 eV. Two of these levels were specific to certain crystals while the other two were seen in every sample and are attributed to common impurities or native defects. Fluctuations in the concentrations oflevels across samples and as a result of modest sample heating (400 K) were also observed.
منابع مشابه
The Effect of Substitution of a Zn Atom in Cdn-1TenClusters (n=1-10)
In this research, structural and electronic properties of ZnCdn-1Ten clusters (n=1-10) have been studied by formalism of density functional theory and using the projector augmented wave within local density approximation. The structural properties (such as bond length/angle and coordination number), electronic and optical properties (such as binding energy, Kohn-Sham spect...
متن کاملAdmittance spectroscopy of thin film solar cells
A short overview on thin film solar cells is given, and the complexity of their electronic structure is illustrated. Several physical mechanisms that give rise to a decay of the capacitance from a low-frequency value CLF to a high-frequency value CHF are discussed. A key of interpreting features in measured admittance spectroscopy (AS) spectra is a careful analysis of CLF and CHF and the temper...
متن کاملGrain-Boundary Physics in Polycrystalline Photovoltaic Materials: Preprint
We use the combination of high-resolution electron microscopy and density-functional theory to study the atomic structure and electronic effects of grain boundaries in polycrystalline photovoltaic materials such as Si, CdTe, CuInSe2, and CuGaSe2. We find that grain boundaries containing dislocation cores create deep levels in Si, CdTe, and CuGaSe2. Surprisingly, however, they do not create deep...
متن کاملColloidal synthesis and optical properties of type-II CdSe-CdTe and inverted CdTe-CdSe core-wing heteronanoplatelets.
We developed colloidal synthesis to investigate the structural and electronic properties of CdSe-CdTe and inverted CdTe-CdSe heteronanoplatelets and experimentally demonstrate that the overgrowth of cadmium selenide or cadmium telluride core nanoplatelets with counterpartner chalcogenide wings leads to type-II heteronanoplatelets with emission energies defined by the bandgaps of the CdSe and Cd...
متن کاملType-II Colloidal Quantum Wells: CdSe/CdTe Core/Crown Heteronanoplatelets
Solution-processed quantum wells, also known as colloidal nanoplatelets (NPLs), are emerging as promising materials for colloidal optoelectronics. In this work, we report the synthesis and characterization of CdSe/CdTe core/crown NPLs exhibiting a Type-II electronic structure and Type-II specific optical properties. Here, based on a core-seeded approach, the CdSe/CdTe core/crown NPLs were synth...
متن کامل